Uln2803a darlington transistor arrays 1 features 3 description the uln2803a device is a highvoltage, highcurrent 1 500marated collector current single output darlington transistor array. This transistor designed for use in generalpurpose amplifier and switching application. Jan 26, 2016 this tutorial shows how to wire a transistor as a switch. Ts01 datasheetpdf taiwan semiconductor company, ltd. Npn silicon transistoraf amplifier and low speed switching, 2sc945 datasheet, 2sc945 circuito, 2sc945 data sheet. Qt optoelectronics, qsc, plastic silicon phototransistor. C114 transistor datasheet pdf electronic manufacturer, part no, datasheet, electronics description. The product status of devices described in this document may have changed since this document was published and may differ in case of multiple devices.
Npn power transistors features npn transistors applications audio, linear and switching applications description the devices are manufactured in planar technology with base island layout. Toshiba, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Amplifier transistors npn silicon features these are pb. Characteristics tamb 25 c unless otherwise specified. D718 datasheet vcbo120v, 8a, npn transistor toshiba. C1815, c1815 datasheet, c1815 npn general purpose transistor datasheet, buy c1815 transistor.
Ib0 400 v vbrcbo collectorbase breakdown voltage ic1ma. The product status of the devices described in this data sheet may have changed since this data sheet was published. Ac151 datasheet, equivalent, cross reference search. The data of figures 3 and 4 is based on tjpk 150 c. Mj15022 silicon power transistors on semiconductor. Free and are rohs compliant maximum ratings rating symbol value unit. Parameter symbol ztx450 ztx451 unit collectorbase voltage vcbo 60 80 v collectoremitter voltage vceo 45 60 v emitterbase voltage vebo 5v peak pulse current icm 2a. Characteristic symbol rating unit collectorbase voltage vcbo 60 v collectoremitter voltage vceo 50 v emitterbase voltage vebo 5 v pin. The product status of devices described in this document may have changed since this document was published and may differ in case of multiple. B typical characteristic 1 0 0 s 100 125 temperature, tc. Nxp semiconductors product data sheet npn switching transistor pmbt3904 data sheet status notes 1.
It is particularly designed for audio amplifiers and switching application up to 1a. C1815 datasheetpdf 1 page unisonic technologies html. Bc557b pdf, bc557b description, bc557b datasheets, bc557b. Npn general purpose transistors, especially suited for use in driver stages of audio amplifiers, low noise input stages of tape recorders, hifi amplifiers, signal processing circuits of television receivers. Their most serious shortcoming is that there is a dead region where small signals do not turn on the transistor. Features high voltage fast switching speed low saturation voltage these devices are pb. Collector current collector current, ic ma dc current gain, h fe 3 10 30 100 10 30 50 100 300 300 500 collector current vs. Bc557b datasheet, bc557b datasheets, bc557b pdf, bc557b circuit.
Max unit vceosus collectoremitter sustaining voltage i c0. C1518 transistor datasheet, cross reference, circuit and application notes in pdf format. D1555 datasheet pdf 3dd1555, npn bipolar transistor, d1555 pdf, d1555 pinout, d1555 equivalent, data, circuit, d1555 schematic, 3dd1555 transistor. Emitter voltage bc372 bc373 vceo 100 80 vdc collector. C33725 datasheet pdf npn transistor nxp, pdf, pinout, equivalent, replacement, schematic, manual, data, circuit, parts, datasheet. Product specification silicon npn power transistor 2sc2166 description high power gain. The tip32c is a silicon epitaxialbase pnp power transistor in jedec to220 plastic package. This is useful when you want to power a large load using a small physical switch. Fairchild semiconductor reserves the right to make changes at any time without notice to improve design. March 1994 features 60 volt vceo 1 amp continuous current ptot 1 watt absolute maximum ratings. Nxp semiconductors product data sheet pnp general purpose transistor pmbta56 data sheet status notes 1.
Please consult the most recently issued data sheet before initiating or completing a design. Vbrceo 300vmin good linearity of hfe low saturation voltage applications. Complementary low voltage transistor features products are preselected in dc current gain application general purpose description these epitaxial planar transistors are mounted in the sot32 plastic package. The device consists of eight npn darlington pairs that feature highvoltage highvoltage outputs. Npn general purpose transistor 2pc1815 data sheet status notes 1. Npn medium frequency transistor bf370 limiting values in accordance with the absolute maximum rating system iec 604. Transistor 2sc1518 silicon npn epitaxial planer type for highfrequency bias oscillation of tape re. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. Ltd1qwr201006,aaudio frequency amplifierhigh frequency osc npntransistorfeaturescollectoremitter voltage. Bc547a transistor npn 45v 100ma to92 fairchild semiconductor datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. C12 datasheet, c12 pdf, c12 data sheet, datasheet, data sheet, pdf. Free devices maximum ratings rating symbol value unit collector emitter voltage bc637 bc639 vceo 60 80 vdc collector base voltage bc637 bc639 vcbo 60 80 vdc emitter base voltage vebo 5. Kec, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
Vce limits of the transistor that must be observed for reliable operation, i. Inchange semiconductor isc product specification isc silicon npn power transistor 2sc1514 description high collectoremitter breakdown voltage. Toshiba transistor silicon pnp epitaxial type pct process 2sc1959 audio frequency low power amplifier applications driver stage amplifier applications switching applications excellent hfe linearity. Savantic semiconductor product specification 2 silicon npn power transistors 2sc4242 characteristics tj25 unless otherwise specified symbol parameter conditions min typ. Bc817 series 45 v, 500 ma npn generalpurpose transistors rev. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Complementary low voltage transistor stmicroelectronics. On special request, these transistors can be manufactured in different pin configurations. Savantic semiconductor product specification silicon npn power transistors 2sc3150 description with to220c package high breakdown voltage. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. Onsemi amplifier transistors pnp silicon,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Bc637, bc639, bc63916 high current transistors npn silicon features these are pb. Sep 18, 2019 c3150 datasheet pdf 800v, npn power transistor mospec, 2sc3150 datasheet, c3150 pdf, c3150 pinout, c3150 equivalent, data, circuit, c3150 schematic. The tip31c is a base island technology npn power transistor in to220 plastic package with better performances than the industry standard tip31c that make this device suitable for audio, power linear and switching applications.
General purpose transistor description the bc14116 is a silicon planar epitaxial npn transistor in jedec to39 metal case. Bc558b datasheet, bc558b pdf, bc558b data sheet, bc558b manual, bc558b pdf, bc558b, datenblatt, electronics bc558b, alldatasheet, free, datasheet, datasheets, data. Ao4616 symbol min typ max units bv dss 30 v vds 30v, v gs 0v 1 tj55c 5 igss 10 a vgsth gate threshold voltage 1. Transistor 2sc1518 silicon npn epitaxial planer type for highfrequency bias oscillation of tape recorders unit. Bu406d bu406, bu407 npn power transistors these devices are high voltage, high speed transistors for horizontal deflection output stages of tvs and crts. The device is a npn transistor manufactured by using planar technology resulting in rugged high performance devices. A2, september 2002 ksc1815 npn epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted electrical characteristics ta25c unless otherwise noted hfe classification symbol parameter value units. C1518 transistor datasheet, cross reference, circuit and application notes in pdf. Collector emitter voltage collector emitter voltage, vce v. Mje15028 complementary silicon plastic power transistors. High voltage npn transistor, ts01 datasheet, ts01 circuito, ts01 data sheet. Epitaxial planar npn transistor general purpose, switching, c3198 datasheet, c3198 circuit, c3198 data sheet.
The complementary npn type is tip31c internal schematic diagram 1 2 3 to220. C1518 datasheet, c1518 pdf, c1518 data sheet, c1518 manual, c1518 pdf, c1518, datenblatt, electronics c1518, alldatasheet, free, datasheet, datasheets, data sheet. The humble transistor q1 emitter e collector c base b transistor basics emitter to base junction is forward biased normally collector to base junction is reverse biased normally transistors are current operated devices, so. Ac transistor amplifiers the transistor amplifiers that we studied in the last chapter have some serious problems for use in ac signals. C3198 datasheet pdf vceo50v, npn transistor elite, c3198 pdf, c3198 pinout, c3198 manual, c3198 schematic, c3198 equivalent, c3198 data.
The transistor is subdivided into four groups, o, y, g and l, according to its dc current gain. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. C1845 datasheet, c1845 pdf, c1845 data sheet, datasheet, data sheet, pdf. Bc372, bc373 high voltage darlington transistors npn silicon features pb. Npn silicon epitaxial planar transistor for switching and af amplifier applications. Free packages are available maximum ratings rating symbol value unit collector. Toshiba transistor silicon pnp epitaxial type pct process. The 2n3439 and 2n3440 are silicon epitaxial planar npn transistors in. C1518 2sc1518 components datasheet pdf data sheet free from. The tip31 transistor has a power dissipation of 40w. Vcc 12v high reliability applications designed for 3 to 4 watts output power amplifiers in hf band mobile radio applications. Order codes part number marking package packing tip32c tip32c to220 tube.
It is intented for use in medium power linear and switching applications. Irf520npbf hexfet power mosfet pd 94818 fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. Bc32725 transistor pnp 45v 800ma to92 fairchild semiconductor datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Pdf dsd0503040c2 dmreh50eb dmreh50eg dmreh50ep dmreh52eg schematic diagram analog tv tuner rca dsc r3918 ic3001 jvc hdd motor c1507 transistor b0acck000005 c4060 transistor c1518 transistor b3rad0000092 c0daczh00017. Toshiba transistor silicon npn epitaxial type pct process 2sc2240 low noise audio amplifier applications the 2sc2240 is a transistor for low frequency and low noise applications.
C1815 datasheet vcbo60v, npn transistor toshiba, 2sc1815 datasheet, c1815 pdf, c1815 pinout, c1815 equivalent, data, circuit, output, c1815 schematic. C3150 datasheet pdf 800v, npn power transistor mospec. Bc846abc848c npn small signal transistor in sot23 features ideally suited for automatic insertion complementary pnp types. Silicon npn epitaxail typefor audio frequency general purpose amplifier applications, c1815 datasheet, c1815 circuit, c1815 data sheet. They are designed for audio amplifiers and drivers utilizing complementary or quasicomplementary circuits. Vbe decreases by about 2 mvk with increasing temperature. Specifications may change in any manner without notice.
341 565 1070 921 392 376 1044 800 825 201 1258 1369 541 782 385 278 166 722 1221 398 660 967 188 769 1054 374 1272 1272 1303 1093 794 1050 141 285 1008 635 822 413 519 243 266 1151 1346